D444 Mosfet

  



Mosfet

2020 popular 1 trends in Electronic Components & Supplies, Jewelry & Accessories, Women's Clothing, Consumer Electronics with D446 and 1. Discover over 155 of our best selection of 1 on AliExpress. Aod444 d444 n-channel mosfet AOD444 General description: The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. ORIGINAL IC AOD444 AOID444 OD444 D444 60V N-Channel MOSFET SERING DIGUNAKAN PADA PERBAIKAN POWER SUPPLY ATAU REGULATOR TV LED POLYTRON The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : D4454, AOD4454

Function : 150V N-Channel MOSFET

Manufacturers : Alpha and Omega Semiconductor

Package : TO 252 Type

Image :

Description :

The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Absolute Maximum Ratings TA=25°C

1. Drain-Source Voltage : Vds = 150 V
2. Gate-Source Voltage : Vgs = ± 20 V

D444

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Pinout

Summary

Transistor Mosfet D444

1. VDS = 150 V
2. ID (at VGS=10V) 20A
3. RDS(ON) (at VGS=10V) < 94mW
4. RDS(ON) (at VGS=7V) < 110mW

D4454 Datasheet

Datasheet download : http://www.aosmd.com/pdfs/datasheet/AOD4454.pdf

Pengganti Mosfet D444



CASS
D444 Datasheet Preview

N-Channel Trench Power MOSFET

No Preview Available !

General Description
MOSFET technology with a low resistance package to
suitable for use in PWM, load switching and general
Features
RDS(ON)<40mΩ @ VGS=10V
● High UIS and UIS 100% Test
● Power switching application
D444
Schematic Diagram
ID = 15A
Package Marking and Ordering Information
Device
D444
TO-252
-
Symbol
VDS Drain-Source Voltage (VGS=0V)
ID (DC)
IDM (pluse)
EAS
Drain Current (DC) at Tc=100℃
Maximum Power Dissipation(Tc=25℃)
TJ,TSTG
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Tape width
Quantity
Value
±20
10.5
23
-55 To 175
V
A
A
mJ
CASS SEMICONDUCTOR CO., LTD
http://www.casssemi.com V3.0



CASS
D444 Datasheet Preview

N-Channel Trench Power MOSFET

No Preview Available !

Symbol
RJC
Value
D444
6.6
℃/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Min
BVDSS
IDSS
Zero Gate Voltage Drain Current(Tc=25℃)
VGS=0V ID=250μA
VDS=60V,VGS=0V
IGSS Gate-Body Leakage Current
VGS(th) Gate Threshold Voltage
1
VGS=10V, ID=12A
VGS=4.5V, ID=6A
2.3
37
1
±100
45
V
μA
V
mΩ
gFS Forward Transconductance
Coss Output Capacitance
Qg Total Gate Charge
Qgd Gate-Drain Charge
td(on)
tr Turn-on Rise Time
Turn-Off Delay Time
Source-Drain Diode Characteristics
VDS=30V,VGS=0V
VDS=30V,ID=15A
VDS=30V,RL=2.5Ω
12
66
13.5
6.2
3.4
2
PF
PF
nC
nS
nS
ISD Source-Drain Current(Body Diode)
ISDM Pulsed Source-Drain Current(Body Diode)
trr Reverse Recovery Time(Note 1)
TJ=25℃,ISD=1A,VGS=0V
di/dt=100A/μs
0.74 0.99
27 nS
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25℃
-2-
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