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650 V, 50 mΩ Gallium Nitride (GaN) FET. Gallium Nitride (GaN) Power FETs Gallium Nitride (GaN) is a hard and stable substance that is revolutionizing semiconductors for military communications, radar, and electronic warfare. SSDI specializes in offering fully screened GaN products in hermetically sealed packaging. Contact the factory to inquire about modifications or other requirements.
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- Gallium Nitride FET Model. V V Orlov, G I Zebrev. National Research Nuclear Un iversity MEPHI, Moscow, Ru ssia. E-mail: gizebrev@mephi.ru.
- The market for gallium nitride (GaN) semiconductors is largely consolidated, with the top four companies taking 65% of the overall market in 2015 says Transparency Market Research (TMR). The dominant company among these top four is Efficient Power Conversion (EPC) with a 19.2% share, with NXP Semiconductors, GaN Systems and Cree making up the rest.
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Click here for more information650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Orderable parts
| Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | SOT429 | Order product |
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
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Buy from distributors
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia
Features and benefits
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability
Applications
- Hard and soft switching converters for industrial and datacom power
- Bridgeless totempole PFC
- PV and UPS inverters
- Servo motor drives
Parametrics
| Type number | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN041-650WSB | SOT429 | TO-247 | Production | N | 1 | 650 | 41 | 175 | 47.2 | 5 | 22 | 187 | 150 | 3.9 | N | 1500 | 147 | 2020-05-14 |
Package
| Status | Package | Package information | Reflow-/Wave soldering | |||
|---|---|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ (9346 617 52127) | Active | GAN041650WSB | TO-247 (SOT429) | SOT429 | Horizontal, Rail Pack |
Quality, reliability & chemical content
Quality and reliability disclaimerGallium Nitride Fetal
Documentation (18)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2021-01-12 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient powerconversion | Application note | 2020-08-14 |
| nexperia_brochure_gan | Nexperia GaN FETs brochure | Brochure | 2021-03-29 |
| nexperia_document_brochure_GaN_CHN | 高功率氮化镓场效应 晶体管 | Brochure | 2021-03-29 |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
| sot429_3d | plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3 lead TO-247 | Outline 3d | 2020-04-06 |
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
Support
If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
Ordering, pricing & availability
| Buy online | ||||
|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | Horizontal, Rail Pack | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
Gallium Nitride's high breakdown voltage and saturation electron velocity make it ideal for high-power, high-frequency electronics.
Gallium Nitride Fet Manufacturers
Gallium Nitride (GaN) HEMT for High-Power, High-Frequency Electronics
Gallium Nitride's high breakdown voltage and saturation electron velocity make it ideal for high-power, high-frequency electronics. Northrop Grumman's 0.2 um GaN HEMT process provides >10x power density over Gallium Arsenide up to 60 GHz. This makes GaN the ideal choice for high-power power amplifiers and LNAs that also require high survivability. The technology is suitable for satellite communications and radar. Components utilizing this technology can be used for established and emerging commercial markets, including cellular and broadband wireless systems as well as aerospace, defense and scientific applications.
Northrop Grumman's GaN HEMT technology is fabricated on 4mil thick 4 inch substrates. GaN HEMT technology offers two metal-interconnect layers, thin film resistors, MIM capacitors, air bridges and backside vias.
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