Part Number : K6A65D, TK6A65D
Function : 650V, Silicon N Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to K6A65D Description 1 Features. Item 1 1X Brand New ORIGINAL Toshiba K5A65D MOSFET Free Fast Same Day Shipping! 1 - 1X Brand New ORIGINAL Toshiba K5A65D MOSFET Free Fast Same Day Shipping! Item 2 1 New Toshiba K5A50D Mosfet 5A 500V TO-220F Ships FAST from USA 2 - 1 New Toshiba K5A50D Mosfet 5A 500V TO-220F Ships FAST from USA.
Package : TO-220 Type
Manufactures : Toshiba Semiconductor
Images :
Transistor Mosfet K6a65d
1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 650 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 6 A
4. Drain peak current : ID(pulse) = 24 A
5. Drain power dissipation = 45 W
6. Single pulse avalanche energy = 281 mJ
7. Avalanche current : IAR = 6 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
9. Channel temperature : Tch = 150 °C
10. Storage temperature range : Tstg = -55 to 150 °C
Applications
Switching Regulator
K6A65D PDF Datasheet
Mosfet K11a65d
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